IXTH20N50D

IXTH20N50, IXTH20N50D

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIXTH20N50D
IC package
Package
TO-247
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<400 W
Input capacitance of field effect transistor
Ciss
2.5 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<330 mΩId, Vgs = 10A, 10V
Gate charge
QG
125 nCVgs = 10V
FET Feature
FET Feature
Depletion Mode