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| Parameter | IXTB62N50L | |
|---|---|---|
IC package | Package | 3-PLUS264™ |
Manufacturer | Manufacturer | IXYS |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <800 W |
Input capacitance of field effect transistor | Ciss | 11.5 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <500 V |
Continuous drain current | IDSS | <62 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <100 mΩId, Vgs = 500mA, 20V |
Gate charge | QG | 550 nCVgs = 20V |
FET Feature | FET Feature | Standard |