IXTB30N100L

IXTB30N100, IXTB30N100L

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Description

Parameters

ParameterIXTB30N100L
IC package
Package
3-PLUS264™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<800 W
Input capacitance of field effect transistor
Ciss
13.2 nFVds = 25V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<450 mΩId, Vgs = 500mA, 20V
Gate charge
QG
545 nCVgs = 20V
FET Feature
FET Feature
Standard