IXTA6N50P

IXTA6N50, IXTA6N50D2, IXTA6N50P

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIXTA6N50D2IXTA6N50P
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<300 W<100 W
Input capacitance of field effect transistor
Ciss
2.8 nFVds = 25V740 pFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<500 mΩId, Vgs = 3A, 0V<1.1 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
(not set)PolarHV™
Gate charge
QG
96 nCVgs = 5V14.6 nCVgs = 10V
FET Feature
FET Feature
Depletion ModeStandard