IXTA56N15

IXTA56N15, IXTA56N15T

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Description

Parameters

ParameterIXTA56N15T
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<300 W
Input capacitance of field effect transistor
Ciss
2.25 nFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V
Continuous drain current
IDSS
<56 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<36 mΩId, Vgs = 28A, 10V
MOSFET series
Series
TrenchHV™
Gate charge
QG
34 nCVgs = 10V
FET Feature
FET Feature
Standard