IXTA3N50

IXTA3N50, IXTA3N50D2, IXTA3N50P

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Description

Parameters

ParameterIXTA3N50D2IXTA3N50P
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<125 W<70 W
Input capacitance of field effect transistor
Ciss
1.07 nFVds = 25V409 pFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<3 A<3.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.5 ΩId, Vgs = 1.5A, 0V<2 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
(not set)PolarHV™
Gate charge
QG
40 nCVgs = 5V9.3 nCVgs = 10V
FET Feature
FET Feature
Depletion ModeStandard