IXTA3N100D2

IXTA3N100, IXTA3N100D2, IXTA3N100P

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Description

Parameters

ParameterIXTA3N100D2IXTA3N100P
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<125 W
Input capacitance of field effect transistor
Ciss
1.02 nFVds = 25V1.1 nFVds = 25V
Continuous drain current
IDSS
<3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5.5 ΩId, Vgs = 1.5A, 0V<4.8 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
(not set)Polar™
Gate charge
QG
37.5 nCVgs = 5V39 nCVgs = 10V
FET Feature
FET Feature
Depletion ModeStandard