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| Parameter | IXTA1R4N100P | IXTA1R4N120P | IXTA1R6N100D2 | IXTA1R6N50D2 | |
|---|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (2 leads + tab) | D²Pak, TO-263 (3 leads + tab) |
Manufacturer | Manufacturer | IXYS | |||
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Power dissipation | P | <63 W | <86 W | <100 W | <100 W |
Input capacitance of field effect transistor | Ciss | 450 pFVds = 25V | 666 pFVds = 25V | 645 pFVds = 25V | 645 pFVds = 25V |
Continuous voltage between drain and source | UDSS | (not set) | (not set) | (not set) | <500 V |
Continuous drain current | IDSS | <1.4 A | <1.4 A | <1.6 A | <1.6 A |
FET channel type | Channel | N-ch | |||
Channel resistance at ON state | RDS-ON | <11 ΩId, Vgs = 500mA, 10V | <13 ΩId, Vgs = 500mA, 10V | <10 ΩId, Vgs = 800mA, 0V | <2.3 ΩId, Vgs = 800mA, 0V |
MOSFET series | Series | Polar™ | Polar™ | (not set) | (not set) |
Gate charge | QG | 17.8 nCVgs = 10V | 24.8 nCVgs = 10V | 27 nCVgs = 5V | 23.7 nCVgs = 5V |
FET Feature | FET Feature | Standard | Standard | Depletion Mode | Depletion Mode |