IXTA1R4N120P

IXTA1, IXTA1R4N100P, IXTA1R4N120P, IXTA1R6N100D2, IXTA1R6N50D2

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Description

Parameters

ParameterIXTA1R4N100PIXTA1R4N120PIXTA1R6N100D2IXTA1R6N50D2
IC package
Package
D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (3 leads + tab)
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<63 W<86 W<100 W<100 W
Input capacitance of field effect transistor
Ciss
450 pFVds = 25V666 pFVds = 25V645 pFVds = 25V645 pFVds = 25V
Continuous voltage between drain and source
UDSS
(not set)(not set)(not set)<500 V
Continuous drain current
IDSS
<1.4 A<1.4 A<1.6 A<1.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<11 ΩId, Vgs = 500mA, 10V<13 ΩId, Vgs = 500mA, 10V<10 ΩId, Vgs = 800mA, 0V<2.3 ΩId, Vgs = 800mA, 0V
MOSFET series
Series
Polar™Polar™(not set)(not set)
Gate charge
QG
17.8 nCVgs = 10V24.8 nCVgs = 10V27 nCVgs = 5V23.7 nCVgs = 5V
FET Feature
FET Feature
StandardStandardDepletion ModeDepletion Mode