IXKG25N80

IXKG25N80, IXKG25N80C

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Description

Parameters

ParameterIXKG25N80C
IC package
Package
ISO264™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<250 W
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<25 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩId, Vgs = 9A, 10V
MOSFET series
Series
CoolMOS™
Gate charge
QG
166 nCVgs = 10V
FET Feature
FET Feature
Standard