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| Parameter | IXFX26N60Q | |
|---|---|---|
IC package | Package | PLUS 247 |
Manufacturer | Manufacturer | IXYS |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <360 W |
Input capacitance of field effect transistor | Ciss | 5.1 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <600 V |
Continuous drain current | IDSS | <26 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <250 mΩId, Vgs = 500mA, 10V |
MOSFET series | Series | HiPerFET™ |
Gate charge | QG | 200 nCVgs = 10V |
FET Feature | FET Feature | Standard |