IXFV52N30PS

IXFV52N30, IXFV52N30P, IXFV52N30PS

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Description

Parameters

ParameterIXFV52N30PIXFV52N30PS
IC package
Package
PLUS-220PLUS-220SMD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mount
Power dissipation
P
<400 W
Input capacitance of field effect transistor
Ciss
3.49 nFVds = 25V
Continuous voltage between drain and source
UDSS
<300 V
Continuous drain current
IDSS
<52 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<66 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHT™
Gate charge
QG
110 nCVgs = 10V
FET Feature
FET Feature
Standard