IXFV12N80

IXFV12N80, IXFV12N80P, IXFV12N80PS

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Description

Parameters

ParameterIXFV12N80PIXFV12N80PS
IC package
Package
PLUS-220PLUS-220SMD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mount
Power dissipation
P
<360 W
Input capacitance of field effect transistor
Ciss
2.8 nFVds = 25V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<850 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHV™
Gate charge
QG
51 nCVgs = 10V
FET Feature
FET Feature
Standard