IXFT30N50

IXFT30N50, IXFT30N50P, IXFT30N50Q

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Description

Parameters

ParameterIXFT30N50PIXFT30N50Q
IC package
Package
TO-268
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<460 W<360 W
Input capacitance of field effect transistor
Ciss
4.15 nFVds = 25V4.925 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<200 mΩId, Vgs = 500mA, 10V<160 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHV™HiPerFET™
Gate charge
QG
70 nCVgs = 10V190 nCVgs = 10V
FET Feature
FET Feature
Standard