IXFN80N50Q2

IXFN80N50, IXFN80N50P, IXFN80N50Q2

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Description

Parameters

ParameterIXFN80N50PIXFN80N50Q2
IC package
Package
SOT-227B miniBLOC
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<700 W<890 W
Input capacitance of field effect transistor
Ciss
12.7 nFVds = 25V12.8 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<66 A<80 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<65 mΩId, Vgs = 500mA, 10V<60 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHV™HiPerFET™
Gate charge
QG
195 nCVgs = 10V250 nCVgs = 10V
FET Feature
FET Feature
Standard