IXFN30N120

IXFN30N120, IXFN30N120P

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Description

Parameters

ParameterIXFN30N120P
IC package
Package
SOT-227B miniBLOC
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<890 W
Input capacitance of field effect transistor
Ciss
19 nFVds = 25V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<350 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
Polar™
Gate charge
QG
310 nCVgs = 10V
FET Feature
FET Feature
Standard