IXFN200N10P

IXFN200N10, IXFN200N10P

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Description

Parameters

ParameterIXFN200N10P
IC package
Package
SOT-227B miniBLOC
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<680 W
Input capacitance of field effect transistor
Ciss
7.6 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<200 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<7.5 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
Polar™
Gate charge
QG
235 nCVgs = 10V
FET Feature
FET Feature
Standard