IXFL80N50

IXFL80N50, IXFL80N50Q2

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Description

Parameters

ParameterIXFL80N50Q2
IC package
Package
ISOPLUS264™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<625 W
Input capacitance of field effect transistor
Ciss
10.5 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<64 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<66 mΩId, Vgs = 40A, 10V
MOSFET series
Series
HiPerFET™
Gate charge
QG
260 nCVgs = 10V
FET Feature
FET Feature
Standard