IXFL38N100Q2

IXFL38N100, IXFL38N100P, IXFL38N100Q2

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Description

Parameters

ParameterIXFL38N100PIXFL38N100Q2
IC package
Package
ISOPLUSi5-Pak™ISOPLUS264™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<520 W<380 W
Input capacitance of field effect transistor
Ciss
24 nFVds = 25V13.5 nFVds = 25V
Continuous drain current
IDSS
<29 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<230 mΩId, Vgs = 19A, 10V<280 mΩId, Vgs = 19A, 10V
MOSFET series
Series
Polar™HiPerFET™
Gate charge
QG
350 nCVgs = 10V250 nCVgs = 10V
FET Feature
FET Feature
Standard