IXFL32N120

IXFL32N120, IXFL32N120P

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Description

Parameters

ParameterIXFL32N120P
IC package
Package
ISOPLUSi5-Pak™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<520 W
Input capacitance of field effect transistor
Ciss
21 nFVds = 25V
Continuous drain current
IDSS
<24 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<340 mΩId, Vgs = 16A, 10V
MOSFET series
Series
Polar™
Gate charge
QG
360 nCVgs = 10V
FET Feature
FET Feature
Standard