IXFK30N100

IXFK30N100, IXFK30N100Q2

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Description

Parameters

ParameterIXFK30N100Q2
IC package
Package
TO-264AA
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<735 W
Input capacitance of field effect transistor
Ciss
8.2 nFVds = 25V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
HiPerFET™
Gate charge
QG
186 nCVgs = 10V
FET Feature
FET Feature
Standard