IXFK26N100

IXFK26N100, IXFK26N100P

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Description

Parameters

ParameterIXFK26N100P
IC package
Package
TO-264
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<780 W
Input capacitance of field effect transistor
Ciss
11.9 nFVds = 25V
Continuous drain current
IDSS
<26 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<390 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
Polar™
Gate charge
QG
197 nCVgs = 10V
FET Feature
FET Feature
Standard