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| Parameter | IXFK210N17T | |
|---|---|---|
IC package | Package | TO-264 |
Manufacturer | Manufacturer | IXYS |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <1.15 kW |
Input capacitance of field effect transistor | Ciss | 18.8 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <170 V |
Continuous drain current | IDSS | <210 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <7.5 mΩId, Vgs = 60A, 10V |
MOSFET series | Series | GigaMOS™ |
Gate charge | QG | 285 nCVgs = 10V |
FET Feature | FET Feature | Standard |