IXFK170N20P

IXFK170N20, IXFK170N20P, IXFK170N20T

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Description

Parameters

ParameterIXFK170N20PIXFK170N20T
IC package
Package
TO-264
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<1.25 kW<1.15 kW
Input capacitance of field effect transistor
Ciss
11.4 nFVds = 25V19.6 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<170 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<14 mΩId, Vgs = 500mA, 10V<11 mΩId, Vgs = 60A, 10V
MOSFET series
Series
Polar™GigaMOS™
Gate charge
QG
185 nCVgs = 10V265 nCVgs = 10V
FET Feature
FET Feature
Standard