IXFK140N25

IXFK140N25, IXFK140N25T

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Description

Parameters

ParameterIXFK140N25T
IC package
Package
TO-264
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<960 W
Input capacitance of field effect transistor
Ciss
19 nFVds = 25V
Continuous voltage between drain and source
UDSS
<250 V
Continuous drain current
IDSS
<140 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<17 mΩId, Vgs = 60A, 10V
MOSFET series
Series
GigaMOS™
Gate charge
QG
255 nCVgs = 10V
FET Feature
FET Feature
Standard