IXFH36N55Q

IXFH36N55, IXFH36N55Q, IXFH36N55Q2

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Description

Parameters

ParameterIXFH36N55QIXFH36N55Q2
IC package
Package
TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<500 W<560 W
Input capacitance of field effect transistor
Ciss
4.5 nFVds = 25V4.1 nFVds = 25V
Continuous voltage between drain and source
UDSS
<550 V
Continuous drain current
IDSS
<36 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<160 mΩId, Vgs = 500mA, 10V<180 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
HiPerFET™
Gate charge
QG
128 nCVgs = 10V110 nCVgs = 10V
FET Feature
FET Feature
Standard