IXFH26N60

IXFH26N60, IXFH26N60P, IXFH26N60Q

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIXFH26N60PIXFH26N60Q
IC package
Package
TO-247TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<460 W<360 W
Input capacitance of field effect transistor
Ciss
4.15 nFVds = 25V5.1 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<26 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<270 mΩId, Vgs = 500mA, 10V<250 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHV™HiPerFET™
Gate charge
QG
72 nCVgs = 10V200 nCVgs = 10V
FET Feature
FET Feature
Standard