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| Parameter | IXFH26N55Q | |
|---|---|---|
IC package | Package | TO-247AD |
Manufacturer | Manufacturer | IXYS |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <375 W |
Input capacitance of field effect transistor | Ciss | 3 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <550 V |
Continuous drain current | IDSS | <26 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <230 mΩId, Vgs = 500mA, 10V |
MOSFET series | Series | HiPerFET™ |
Gate charge | QG | 92 nCVgs = 10V |
FET Feature | FET Feature | Standard |