IXFH20N80Q

IXFH20N80, IXFH20N80P, IXFH20N80Q

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIXFH20N80PIXFH20N80Q
IC package
Package
TO-247TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<500 W<360 W
Input capacitance of field effect transistor
Ciss
4.685 nFVds = 25V5.1 nFVds = 25V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<520 mΩId, Vgs = 10A, 10V<420 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHV™HiPerFET™
Gate charge
QG
86 nCVgs = 10V200 nCVgs = 10V
FET Feature
FET Feature
Standard