IXFH13N80Q

IXFH13N80, IXFH13N80Q

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Description

Parameters

ParameterIXFH13N80Q
IC package
Package
TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<250 W
Input capacitance of field effect transistor
Ciss
3.25 nFVds = 25V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<13 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<700 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
HiPerFET™
Gate charge
QG
90 nCVgs = 10V
FET Feature
FET Feature
Standard