IXFH12N100

IXFH12N100, IXFH12N100F, IXFH12N100P, IXFH12N100Q

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Description

Parameters

ParameterIXFH12N100FIXFH12N100PIXFH12N100Q
IC package
Package
TO-247AD, TO-247TO-247AD, TO-247TO-247AD, TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<300 W<463 W<300 W
Input capacitance of field effect transistor
Ciss
2.7 nFVds = 25V4.08 nFVds = 25V2.9 nFVds = 25V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.05 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
HiPerRF™Polar™HiPerFET™
Gate charge
QG
77 nCVgs = 10V80 nCVgs = 10V90 nCVgs = 10V
FET Feature
FET Feature
Standard