IXFH10N80

IXFH10N80, IXFH10N80P

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Description

Parameters

ParameterIXFH10N80P
IC package
Package
TO-247
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<300 W
Input capacitance of field effect transistor
Ciss
2.05 nFVds = 25V
Continuous voltage between drain and source
UDSS
<800 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.1 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarHV™
Gate charge
QG
40 nCVgs = 10V
FET Feature
FET Feature
Standard