IXFB40N110P

IXFB40N110, IXFB40N110P

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Description

Parameters

ParameterIXFB40N110P
IC package
Package
3-PLUS264™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<1.25 kW
Input capacitance of field effect transistor
Ciss
19 nFVds = 25V
Continuous drain current
IDSS
<40 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<260 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
Polar™
Gate charge
QG
310 nCVgs = 10V
FET Feature
FET Feature
Standard