IXFB30N120P

IXFB30N120, IXFB30N120P, IXFB30N120Q2

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Description

Parameters

ParameterIXFB30N120PIXFB30N120Q2
IC package
Package
3-PLUS264™
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<1.25 kW(not set)
Input capacitance of field effect transistor
Ciss
22.5 nFVds = 25V(not set)
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<350 mΩId, Vgs = 500mA, 10V(not set)
MOSFET series
Series
PolarVHV™(not set)
Gate charge
QG
310 nCVgs = 10V(not set)
FET Feature
FET Feature
Standard