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| Parameter | IXFB170N30P | |
|---|---|---|
Manufacturer | Manufacturer | IXYS |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <1.25 kW |
Input capacitance of field effect transistor | Ciss | 20 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <300 V |
Continuous drain current | IDSS | <170 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <18 mΩId, Vgs = 500mA, 10V |
MOSFET series | Series | Polar™ |
Gate charge | QG | 258 nCVgs = 10V |
FET Feature | FET Feature | Standard |