IRLI530GPBF

IRLI530, IRLI530G, IRLI530GPBF, IRLI530N, IRLI530NPBF

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Description

Parameters

ParameterIRLI530GIRLI530GPBFIRLI530NIRLI530NPBF
IC package
Package
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads, Isolated), ITO-220ABTO-220-3 Full Pack (Straight Leads)TO-220-3 Full Pack (Straight Leads)
Manufacturer
Manufacturer
Vishay/SiliconixVishay/SiliconixInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<42 W<42 W<41 W<41 W
Input capacitance of field effect transistor
Ciss
930 pFVds = 25V930 pFVds = 25V800 pFVds = 25V800 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<9.7 A<9.7 A<12 A<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<160 mΩId, Vgs = 5.8A, 5V<160 mΩId, Vgs = 5.8A, 5V<100 mΩId, Vgs = 9A. 10V<100 mΩId, Vgs = 9A. 10V
MOSFET series
Series
(not set)(not set)HEXFET®HEXFET®
Gate charge
QG
28 nCVgs = 5V28 nCVgs = 5V34 nCVgs = 5V34 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate