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| Parameter | IRLD110PBF | |
|---|---|---|
IC package | Package | 4-DIP, HVMDIP |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <1.3 W |
Input capacitance of field effect transistor | Ciss | 250 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <1 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <540 mΩId, Vgs = 600mA, 5V |
Gate charge | QG | 6.1 nCVgs = 5V |
FET Feature | FET Feature | Logic Level Gate |