IRL8113LPBF

IRL8113, IRL8113L, IRL8113LPBF, IRL8113PBF, IRL8113S, IRL8113SPBF, IRL8113STRL, IRL8113STRLPBF, IRL8113STRR, IRL8113STRRPBF

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Description

Parameters

ParameterIRL8113LIRL8113LPBFIRL8113PBFIRL8113SIRL8113SPBFIRL8113STRLIRL8113STRLPBFIRL8113STRRIRL8113STRRPBF
IC package
Package
TO-220-3 (Straight Leads), TO-262-3 (Straight Leads)TO-220-3 (Straight Leads), TO-262-3 (Straight Leads)TO-220-3 (Straight Leads), TO-220-3 (Straight Leads)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)TO-220-3 (Straight Leads), D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeThrough-holeSurface mountSurface mountSurface mountSurface mountSurface mountSurface mount
Power dissipation
P
<110 W
Input capacitance of field effect transistor
Ciss
2.84 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<105 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<6 mΩId, Vgs = 21A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
35 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate