IRFU9120N

IRFU9120, IRFU9120N, IRFU9120NPBF, IRFU9120PBF

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Description

Parameters

ParameterIRFU9120NIRFU9120NPBFIRFU9120PBF
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer
Manufacturer
International RectifierInternational RectifierVishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<40 W<40 W<2.5 W
Input capacitance of field effect transistor
Ciss
350 pFVds = 25V350 pFVds = 25V390 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<6.6 A<6.6 A<5.6 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<480 mΩId, Vgs = 3.9A, 10V<480 mΩId, Vgs = 3.9A, 10V<600 mΩId, Vgs = 3.4A, 10V
MOSFET series
Series
HEXFET®HEXFET®(not set)
Gate charge
QG
27 nCVgs = 10V27 nCVgs = 10V18 nCVgs = 10V
FET Feature
FET Feature
Standard