IRFU4105Z

IRFU4105, IRFU4105PBF, IRFU4105Z, IRFU4105ZPBF, IRFU4105ZTR, IRFU4105ZTRL, IRFU4105ZTRR

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Description

Parameters

ParameterIRFU4105PBFIRFU4105ZIRFU4105ZPBFIRFU4105ZTRIRFU4105ZTRLIRFU4105ZTRR
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer
Manufacturer
International RectifierInternational RectifierInternational RectifierVishay/SiliconixVishay/SiliconixVishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<68 W<48 W<48 W<48 W<48 W<48 W
Input capacitance of field effect transistor
Ciss
700 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<27 A<30 A<30 A<30 A<30 A<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<45 mΩId, Vgs = 16A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
34 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V
FET Feature
FET Feature
Standard