IRFU220BTU_AM002

IRFU220, IRFU220BTU_AM002, IRFU220BTU_F080, IRFU220BTU_FP001, IRFU220N, IRFU220NPBF, IRFU220PBF, IRFU220_R4941

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Description

Parameters

Parameter		IRFU220BTU_AM002	IRFU220BTU_F080	IRFU220BTU_FP001	IRFU220N	IRFU220NPBF	IRFU220PBF	IRFU220_R4941
IC package	Package	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer	Manufacturer	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	International Rectifier	International Rectifier	Vishay/Siliconix	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Power dissipation	P	<2.5 W	<2.5 W	<2.5 W	<43 W	<43 W	<2.5 W	<50 W
Input capacitance of field effect transistor	C_iss	390 pFVds = 25V	390 pFVds = 25V	390 pFVds = 25V	300 pFVds = 25V	300 pFVds = 25V	260 pFVds = 25V	330 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<200 V
Continuous drain current	I_DSS	<4.6 A	<4.6 A	<4.6 A	<5 A	<5 A	<4.8 A	<4.6 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<800 mΩId, Vgs = 2.3A, 10V	<800 mΩId, Vgs = 2.3A, 10V	<800 mΩId, Vgs = 2.3A, 10V	<600 mΩId, Vgs = 2.9A, 10V	<600 mΩId, Vgs = 2.9A, 10V	<800 mΩId, Vgs = 2.9A, 10V	<800 mΩId, Vgs = 2.4A, 10V
MOSFET series	Series	(not set)	(not set)	(not set)	HEXFET®	HEXFET®	(not set)	(not set)
Gate charge	Q_G	16 nCVgs = 10V	16 nCVgs = 10V	16 nCVgs = 10V	23 nCVgs = 10V	23 nCVgs = 10V	14 nCVgs = 10V	18 nCVgs = 10V
FET Feature	FET Feature	Standard