IRFU120_R4941

IRFU120, IRFU120ATU, IRFU120N, IRFU120NPBF, IRFU120PBF, IRFU120_R4941, IRFU120Z, IRFU120ZPBF

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIRFU120ATUIRFU120NIRFU120NPBFIRFU120PBFIRFU120_R4941IRFU120ZIRFU120ZPBF
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Manufacturer
Manufacturer
Fairchild SemiconductorInternational RectifierInternational RectifierVishay/SiliconixFairchild SemiconductorInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2.5 W<48 W<48 W<2.5 W<50 W<35 W<35 W
Input capacitance of field effect transistor
Ciss
480 pFVds = 25V330 pFVds = 25V330 pFVds = 25V360 pFVds = 25V350 pFVds = 25V310 pFVds = 25V310 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<8.4 A<9.4 A<9.4 A<7.7 A<8.4 A<8.7 A<8.7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<200 mΩId, Vgs = 4.2A, 10V<210 mΩId, Vgs = 5.6A, 10V<210 mΩId, Vgs = 5.6A, 10V<270 mΩId, Vgs = 4.6A, 10V<270 mΩId, Vgs = 5.9A, 10V<190 mΩId, Vgs = 5.2A, 10V<190 mΩId, Vgs = 5.2A, 10V
MOSFET series
Series
(not set)HEXFET®HEXFET®(not set)(not set)HEXFET®HEXFET®
Gate charge
QG
22 nCVgs = 10V25 nCVgs = 10V25 nCVgs = 10V16 nCVgs = 10V15 nCVgs = 10V10 nCVgs = 10V10 nCVgs = 10V
FET Feature
FET Feature
Standard