IRFS9N60

IRFS9N60, IRFS9N60A, IRFS9N60APBF, IRFS9N60ATRL, IRFS9N60ATRLPBF, IRFS9N60ATRR, IRFS9N60ATRRPBF

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Description

Parameters

ParameterIRFS9N60AIRFS9N60APBFIRFS9N60ATRLIRFS9N60ATRLPBFIRFS9N60ATRRIRFS9N60ATRRPBF
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<170 W
Input capacitance of field effect transistor
Ciss
1.4 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<9.2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<750 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
HEXFET®(not set)HEXFET®(not set)HEXFET®(not set)
Gate charge
QG
49 nCVgs = 10V
FET Feature
FET Feature
Standard