IRFS59N10D

IRFS59N10, IRFS59N10D, IRFS59N10DPBF, IRFS59N10DTRL, IRFS59N10DTRLP, IRFS59N10DTRR, IRFS59N10DTRRP

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Description

Parameters

ParameterIRFS59N10DIRFS59N10DPBFIRFS59N10DTRLIRFS59N10DTRLPIRFS59N10DTRRIRFS59N10DTRRP
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<3.8 W
Input capacitance of field effect transistor
Ciss
2.45 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<59 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<25 mΩId, Vgs = 35.4A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
114 nCVgs = 10V
FET Feature
FET Feature
Standard