IRFR4105TR

IRFR4105, IRFR4105PBF, IRFR4105TR, IRFR4105TRL, IRFR4105TRLPBF, IRFR4105TRPBF, IRFR4105TRR, IRFR4105Z, IRFR4105ZPBF, IRFR4105ZTR, IRFR4105ZTRL, IRFR4105ZTRLPBF, IRFR4105ZTRPBF, IRFR4105ZTRR, IRFR4105ZTRRPBF

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Description

Parameters

ParameterIRFR4105PBFIRFR4105TRIRFR4105TRLIRFR4105TRLPBFIRFR4105TRPBFIRFR4105TRRIRFR4105ZIRFR4105ZPBFIRFR4105ZTRIRFR4105ZTRLIRFR4105ZTRLPBFIRFR4105ZTRPBFIRFR4105ZTRRIRFR4105ZTRRPBF
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<68 W<68 W<68 W<68 W<68 W<68 W<48 W<48 W<48 W<48 W<48 W<48 W<48 W<48 W
Input capacitance of field effect transistor
Ciss
700 pFVds = 25V700 pFVds = 25V700 pFVds = 25V700 pFVds = 25V700 pFVds = 25V700 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V740 pFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<27 A<27 A<27 A<27 A<27 A<27 A<30 A<30 A<30 A<30 A<30 A<30 A<30 A<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<45 mΩId, Vgs = 16A, 10V<45 mΩId, Vgs = 16A, 10V<45 mΩId, Vgs = 16A, 10V<45 mΩId, Vgs = 16A, 10V<45 mΩId, Vgs = 16A, 10V<45 mΩId, Vgs = 16A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V<24.5 mΩId, Vgs = 18A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
34 nCVgs = 10V34 nCVgs = 10V34 nCVgs = 10V34 nCVgs = 10V34 nCVgs = 10V34 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V27 nCVgs = 10V
FET Feature
FET Feature
Standard