This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | IRFR220,118 | IRFR220BTM_FP001 | IRFR220N | IRFR220NCPBF | IRFR220NPBF | IRFR220NTR | IRFR220NTRL | IRFR220NTRLPBF | IRFR220NTRPBF | IRFR220NTRR | IRFR220NTRRPBF | IRFR220PBF | IRFR220TR | IRFR220TRL | IRFR220TRPBF | IRFR220TRR | IRFR220TRRPBF | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | ||||||||||||||||
Manufacturer | Manufacturer | NXP Semiconductors | Fairchild Semiconductor | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||||||||||||||
Power dissipation | P | <42 W | <2.5 W | <43 W | <43 W | <43 W | <43 W | <43 W | <43 W | <43 W | <43 W | <43 W | <2.5 W | <2.5 W | <2.5 W | <2.5 W | <2.5 W | <2.5 W |
Input capacitance of field effect transistor | Ciss | 280 pFVds = 25V | 390 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 300 pFVds = 25V | 260 pFVds = 25V | 260 pFVds = 25V | 260 pFVds = 25V | 260 pFVds = 25V | 260 pFVds = 25V | 260 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <200 V | ||||||||||||||||
Continuous drain current | IDSS | <4.8 A | <4.6 A | <5 A | <5 A | <5 A | <5 A | <5 A | <5 A | <5 A | <5 A | <5 A | <4.8 A | <4.8 A | <4.8 A | <4.8 A | <4.8 A | <4.8 A |
FET channel type | Channel | N-ch | ||||||||||||||||
Channel resistance at ON state | RDS-ON | <800 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.3A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <600 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.9A, 10V | <800 mΩId, Vgs = 2.9A, 10V |
MOSFET series | Series | TrenchMOS™ | (not set) | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | (not set) | (not set) | (not set) | (not set) | (not set) | (not set) |
Gate charge | QG | 14 nCVgs = 10V | 16 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 23 nCVgs = 10V | 14 nCVgs = 10V | 14 nCVgs = 10V | 14 nCVgs = 10V | 14 nCVgs = 10V | 14 nCVgs = 10V | 14 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||||||||||||||||