IRFR12N25DCPBF

IRFR12N25, IRFR12N25D, IRFR12N25DCPBF, IRFR12N25DCTRLP, IRFR12N25DCTRRP, IRFR12N25DPBF, IRFR12N25DTRLP, IRFR12N25DTRPBF, IRFR12N25DTRRP

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Description

Parameters

ParameterIRFR12N25DIRFR12N25DCPBFIRFR12N25DCTRLPIRFR12N25DCTRRPIRFR12N25DPBFIRFR12N25DTRLPIRFR12N25DTRPBFIRFR12N25DTRRP
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<144 W
Input capacitance of field effect transistor
Ciss
810 pFVds = 25V
Continuous voltage between drain and source
UDSS
<250 V
Continuous drain current
IDSS
<14 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<260 mΩId, Vgs = 8.4A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
35 nCVgs = 10V
FET Feature
FET Feature
Standard