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| Parameter | IRFR120ATM | IRFR120N | IRFR120NCPBF | IRFR120NCTRLPBF | IRFR120NPBF | IRFR120NTR | IRFR120NTRL | IRFR120NTRLPBF | IRFR120NTRPBF | IRFR120NTRR | IRFR120NTRRPBF | IRFR120PBF | IRFR120_R4941 | IRFR120TR | IRFR120TRL | IRFR120TRLPBF | IRFR120TRR | IRFR120Z | IRFR120ZPBF | IRFR120ZTR | IRFR120ZTRL | IRFR120ZTRLPBF | IRFR120ZTRPBF | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | ||||||||||||||||||||||
Manufacturer | Manufacturer | Fairchild Semiconductor | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | Vishay/Siliconix | Fairchild Semiconductor | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix | Vishay/Siliconix | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier | International Rectifier |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||||||||||||||||||||
Power dissipation | P | <2.5 W | <48 W | <48 W | <48 W | <48 W | <48 W | <48 W | <48 W | <48 W | <48 W | <48 W | <2.5 W | <50 W | <2.5 W | <2.5 W | <2.5 W | <2.5 W | <35 W | <35 W | <35 W | <35 W | <35 W | <35 W |
Input capacitance of field effect transistor | Ciss | 480 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 330 pFVds = 25V | 360 pFVds = 25V | 350 pFVds = 25V | 360 pFVds = 25V | 360 pFVds = 25V | 360 pFVds = 25V | 360 pFVds = 25V | 310 pFVds = 25V | 310 pFVds = 25V | 310 pFVds = 25V | 310 pFVds = 25V | 310 pFVds = 25V | 310 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V | ||||||||||||||||||||||
Continuous drain current | IDSS | <8.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <9.4 A | <7.7 A | <8.4 A | <7.7 A | <7.7 A | <7.7 A | <7.7 A | <8.7 A | <8.7 A | <8.7 A | <8.7 A | <8.7 A | <8.7 A |
FET channel type | Channel | N-ch | ||||||||||||||||||||||
Channel resistance at ON state | RDS-ON | <200 mΩId, Vgs = 4.2A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <210 mΩId, Vgs = 5.6A, 10V | <270 mΩId, Vgs = 4.6A, 10V | <270 mΩId, Vgs = 5.9A, 10V | <270 mΩId, Vgs = 4.6A, 10V | <270 mΩId, Vgs = 4.6A, 10V | <270 mΩId, Vgs = 4.6A, 10V | <270 mΩId, Vgs = 4.6A, 10V | <190 mΩId, Vgs = 5.2A, 10V | <190 mΩId, Vgs = 5.2A, 10V | <190 mΩId, Vgs = 5.2A, 10V | <190 mΩId, Vgs = 5.2A, 10V | <190 mΩId, Vgs = 5.2A, 10V | <190 mΩId, Vgs = 5.2A, 10V |
MOSFET series | Series | (not set) | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | (not set) | (not set) | (not set) | (not set) | (not set) | (not set) | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Gate charge | QG | 22 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 25 nCVgs = 10V | 16 nCVgs = 10V | 15 nCVgs = 10V | 16 nCVgs = 10V | 16 nCVgs = 10V | 16 nCVgs = 10V | 16 nCVgs = 10V | 10 nCVgs = 10V | 10 nCVgs = 10V | 10 nCVgs = 10V | 10 nCVgs = 10V | 10 nCVgs = 10V | 10 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||||||||||||||||||||||