IRFP250NPBF

IRFP250, IRFP250N, IRFP250NPBF, IRFP250PBF

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Description

Parameters

ParameterIRFP250NIRFP250NPBFIRFP250PBF
IC package
Package
TO-247-3
Manufacturer
Manufacturer
International RectifierInternational RectifierVishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<214 W<214 W<190 W
Input capacitance of field effect transistor
Ciss
2.159 nFVds = 25V2.159 nFVds = 25V2.8 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<33 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<75 mΩId, Vgs = 18A, 10V<75 mΩId, Vgs = 18A, 10V<85 mΩId, Vgs = 18A, 10V
MOSFET series
Series
HEXFET®HEXFET®PowerMESH™
Gate charge
QG
123 nCVgs = 10V123 nCVgs = 10V140 nCVgs = 10V
FET Feature
FET Feature
Standard