IRFN214BTA_FP001

IRFN214, IRFN214BTA_FP001

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Description

Parameters

ParameterIRFN214BTA_FP001
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<1.8 W
Input capacitance of field effect transistor
Ciss
275 pFVds = 25V
Continuous voltage between drain and source
UDSS
<250 V
Continuous drain current
IDSS
<600 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2 ΩId, Vgs = 300mA, 10V
Gate charge
QG
10.5 nCVgs = 10V
FET Feature
FET Feature
Standard