IRFL014N

IRFL014, IRFL014N, IRFL014NPBF, IRFL014NTR, IRFL014NTRPBF, IRFL014PBF, IRFL014TR, IRFL014TRPBF

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Description

Parameters

ParameterIRFL014NIRFL014NPBFIRFL014NTRIRFL014NTRPBFIRFL014PBFIRFL014TRIRFL014TRPBF
IC package
Package
SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
International RectifierInternational RectifierInternational RectifierInternational RectifierVishay/SiliconixVishay/SiliconixVishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1 W<1 W<1 W<1 W<2 W<2 W<2 W
Input capacitance of field effect transistor
Ciss
190 pFVds = 25V190 pFVds = 25V190 pFVds = 25V190 pFVds = 25V300 pFVds = 25V300 pFVds = 25V300 pFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V<55 V<55 V<55 V<60 V<60 V<60 V
Continuous drain current
IDSS
<1.9 A<1.9 A<1.9 A<1.9 A<2.7 A<2.7 A<2.7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<160 mΩId, Vgs = 1.9A, 10V<160 mΩId, Vgs = 1.9A, 10V<160 mΩId, Vgs = 1.9A, 10V<160 mΩId, Vgs = 1.9A, 10V<200 mΩId, Vgs = 1.6A, 10V<200 mΩId, Vgs = 1.6A, 10V<200 mΩId, Vgs = 1.6A, 10V
MOSFET series
Series
HEXFET®HEXFET®HEXFET®HEXFET®(not set)(not set)(not set)
Gate charge
QG
11 nCVgs = 10V
FET Feature
FET Feature
Standard